| PART |
Description |
Maker |
| CXK5T8512TM/TN-10LLX CXK5T8512TM/TN-12LLX CXK5T851 |
64K X 8 STANDARD SRAM, 120 ns, PDSO32
65536-word x 8-bit High Speed CMOS Static RAM
65536-word x 8-bit High Speed CMOS Static RAM
|
SONY
|
| CXK5B16120J/TM-12 |
65536-word x 16-bit High Speed Bi-CMOS Static RAM 65536字16位高速双CMOS静态RAM
65536-word x 16-bit High Speed Bi-CMOS Static RAM
|
Johnson Electric Group
SONY
|
| HM62864 |
65536-word 8-bit High Speed CMOS Static RAM
65536-word 8-bit High Speed CMOS Static RAM
65536-word ? 8-bit High Speed CMOS Static RAM
|
Electronic Theatre Controls, Inc.
ETC
|
| CXK5V8512TM-10LLX CXK5V8512TM-85LLX |
65536-word x 8-bit High Speed CMOS Static RAM
|
SONY
|
| CXK5V16100TM-10LLX CXK5V16100TM-85LLX |
65536-word x 16-bit High Speed CMOS Static RAM
65536-word X 16-bit High Speed CMOS Static RAM
|
SONY
|
| M5M51016BRT-10VL-I M5M51016BRT-10VLL-I M5M51016BTP |
From old datasheet system
1048576-BIT CMOS STATICRAM
1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM
1048576-bit (65536-word by 16-bit) CMOS static RAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| M5L2764K M5L2764K-2 |
65536 Bit Erasable and Electrically Reprogrammable ROM
65536-BIT (8192-WORD BY 8-BIT) ERASABLE AND ELECTRICALLT REPROGRAMMABLE ROM
|
Mitsubishi Electric Semiconductor
|
| TC551664AJ |
65536 Word x 16-Bit CMOS Static RAM
|
Toshiba Semiconductor
|
| HN27C1024HCC |
65536-word x 16-bit CMOS UV Erasable and Programmable ROM
|
Renesas Technology / Hitachi Semiconductor
|
| M6MGB331S8AKT M6MGT331S8AKT |
33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI
|
Renesas Electronics Corporation.
|
| MR27V852D |
524,288-Word x 16-Bit or 1,048,576-Word x 8-Bit 8-Word x 16-Bit or 16-Word x 8-Bit Page Mode One Time PROM
From old datasheet system
|
OKI
|
| MR27V3252D |
2,097,152-Word x 16-Bit or 4,194,304-Word x 8-Bit 8-Word x 16-Bit or 16-Word x 8-Bit Page Mode One Time PROM
|
OKI[OKI electronic componets]
|
